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Defects and Related Carrier Traps in GaN AlGaN and Implanted SiC


In this project, work has been performed on nine different topics: (1) Ultra-fast microwave annealing of ion-implanted 4H-SiC ; (2) Silicon carbide nanowires grown by a novel microwave heating-assisted physical vapor transport process; (3) Depth resolved X-ray determination of surface strain in free-standing films of HVPE-grown GaN and 71Ga NMR characterization (4) Effects of the surface and interface related defects in free-standing HVPE grown GaN films by high resolution X-ray diffraction measurements; (5) Bias stress induced instability in 4H-SiC DMOSFETs; (6) Stability and 2-D simulation studies of avalanche breakdown in 4H-SiC DMOSFETs with JTE; and (7) Power added efficiency and linearity tradeoffs in class AB biased GaN and GaAs microwave power HEMTs (8) High quality interlayer dielectric for 4H-SiC DMOSFETs; and (9)Thermally stable Ge/Cu/Ti ohmic contacts to n-type GaN. Important results on each topic are given in the attachment. We collaborated with Dr. Ken Jones of ARL on the......

【作者名称】: Mulpuri, Venkata R
【关 键 词】: MICROWAVES, NANOSTRUCTURES, ANNEALING, SURFACE PROPERTIES, SILICON CARBIDES, HIGH ELECTRON MOBILITY TRANSISTORS
【网站名称】: 美国国防技术信息中心
【期刊论文数据库】: [DBS_Articles_01]
【期刊论文编号】: 102,837,042
【摘要长度】: 1,000
【栏目名称】: 所有文件
【上篇论文】: 外军国防科技报告 - Fundamental Role of Grain Boundaries: Meso-Scale Simulation and Measurement
【下篇论文】: 外军国防科技报告 - Photonic Crystal Nano-Electronic Device Structures for Large Array Thermal Imaging

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